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t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 1 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? commercial and military radar ? communications ordering information part eccn description tga 261 2 ear99 6 C 12 ghz gan lna product features ? frequency range: 6 C 12 ghz ? nf: < 1 .8 db (1.5db midband) ? p1db: 20dbm ? otoi: 29 dbm ? small signal gain: > 2 2 db ? return loss: >7 db ? bias : v d = 10 v, i dq = 10 0 m a, v g = - 2.3 v typical ? c hip dimensions: 2.1 x 1.5 x 0.1 0 mm performance features are typical across frequency , under recommended bias and at 25c carrier backside. functional block diagram general description triquint s TGA2612 is a broadband low noise amplifier fabricated on triquints production 0.25um gan on sic process (tqgan25). covering 6 C 12g hz , the TGA2612 typically provides p1db of 20dbm , greater than 22db of small signal gain, 1.5 db noise figure (mid - band) and 29dbm otoi. in addition to the high electrical performance, this gan amplifier also provides a hi gh level of input power robustness. able to survive up to 2w of input power without performance degradation, triquints TGA2612 provides flexibility regarding receive chain protection resulting in lower costs and reduced board space. fully matched to 50 ohms with integrated dc blocking caps on both i/o ports, the TGA2612 is ideally suited for both military and commercial r adar and communications applications. lead - free and rohs compliant evaluation boards are available upon request. p ad configuration p ad no. symbol 1 rf in 2 v d 3 rf out 4 v g 1 3 2 4 j1 rf in j2 rf out
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 2 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0 v gate voltage range (v g ) - 5 to 0v drain current (i d ) 2 50 ma gate current (i g ) - 1 to 7 ma power dissipation , 85 c (p diss ) 6 w input power , cw, 50 , (p in ) 34 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 10 v drain current (i d q ) 1 0 0 m a gate voltage (v g ) - 2.3 v typical electrical specifications are measured at specified test conditions. specifications are not guaranteed overall operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 10 v, i d q = 10 0 m a, v g = - 2.3 v typical parameter min typical max units operation frequency range 6.0 12.0 ghz small signal gain > 2 2 db input return loss > 7 db output return loss >10 db noise figure < 1. 8 db output power at 1 db gain compression 2 0 dbm output toi 29 dbm gain temperature coefficient - 0.0 44 db/c noise figure temperature coefficient 0.009 db/c
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 3 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base plate = 85 c , v d = 10v, i d q = 100ma, p diss =1w 16 oc/w channel temperature, t ch (without rf) 101 c median lifetime (t m ) 7.9 x 10^11 hrs thermal resistance ( jc ) (1) t base plate = 85 c , v d = 10v, i d _drive = 208ma, p out = 26.6dbm, p diss = 1.6w 16 oc/w channel temperature, t ch (under rf) 111 c median lifetime (t m ) 2 x 10^11 hrs notes: 1. thermal resistance measured to back of c arrier plate. mmic mounted on 4 0 mils cumo carrier using 1.5 mil 80/20 ausn. median lifetime test conditions: v d = 40v; failure criteria is 10% reduction in i d_max
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 4 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 10v, i dq = 10 0 ma, v g = - 2.3v typical 10.0 14.0 18.0 22.0 26.0 30.0 34.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s21 (db) frequency (ghz) gain vs. frequency vs. temperature - 40 c +25 c +85 c 10.0 14.0 18.0 22.0 26.0 30.0 34.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s21 (db) frequency (ghz) gain vs. frequency vs. v d i dq = 100ma temp. = 25 c 20v 18v 16v 14v 12v 10v 10.0 14.0 18.0 22.0 26.0 30.0 34.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s21 (db) frequency (ghz) gain vs. frequency vs. i dq v d = 10v temp. = 25 c 140ma 120ma 100ma 80ma 60ma 0.5 1 1.5 2 2.5 3 3.5 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 noise figure (db) frequency (ghz) noise figure vs. freq. vs. temperature +25 c +85 c - 40 c v d = 10 v, i dq = 100ma -30 -25 -20 -15 -10 -5 0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. - 40 c +25 c +85 c -30 -25 -20 -15 -10 -5 0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. - 40 c +25 c +85 c
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 5 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 10 v, i dq = 125 ma, v g = - 2.3 v typical typical performance conditions unless otherwise specified: v d = 10v, i dq = 10 0 ma, v g = - 2.3v typical 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 noise figure (db) frequency (ghz) noise figure vs. frequency. vs. v d 6v 10v 12v 14v 16v 18v 20v temp. = +25 c i dq = 100ma 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 noise figure (db) frequency (ghz) noise figure vs. frequency vs. i dq temp. = +25 c v d = 10 v i dq =60ma i dq =80ma i dq =100ma i dq =120ma i dq =140ma 14 17 20 23 26 29 32 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 p sat (dbm) frequency (ghz) p sat vs. frequency. vs. v d temp. = +25 c i dq = 100 ma, p in = 12dbm 6v 8v 10v 12v 14v 16v 18v 20v 20 22 24 26 28 30 32 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 p sat (dbm) frequency (ghz) p sat vs. frequency vs. temperature - 40 c +25 c +85 c v d = 10 v, i dq = 100 ma p in = 12dbm 13 15 17 19 21 23 25 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature - 40 c +25 c +85 c v d = 10 v, i dq = 100 ma 7 10 13 16 19 22 25 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 p1db (dbm) frequency (ghz) p1db vs. frequency. vs. v d temp. = +25 c 6v 8v 10v 12v 14v 16v 18v 20v i dq = 100 ma
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 6 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 10v, i dq = 10 0 ma, v g = - 2.3v typical 12 15 18 21 24 27 30 -15 -12 -9 -6 -3 0 3 6 9 12 gain (db) input power (dbm) gain vs. input power vs. frequency temp. = +25 c 6.0 ghz 8.0 ghz 10.0 ghz 12.0 ghz v d = 10 v, i dq = 100 ma 80 110 140 170 200 230 260 -15 -12 -9 -6 -3 0 3 6 9 12 drain current (ma) input power (dbm) i d vs. input power vs. frequency temp. = +25 c 6.0 ghz 8.0 ghz 10.0 ghz 12.0 ghz v d = 10 v, i dq = 100 ma 8 12 16 20 24 28 32 -15 -12 -9 -6 -3 0 3 6 9 12 output power (dbm) input power (dbm) output power vs. input power vs. v d . i dq = 100ma temp. = +25 c frequency = 9 ghz 6v 8v 10v 12v 14v 16v 18v 20v 17 20 23 26 29 32 35 6.0 7.0 8.0 9.0 10.0 11.0 12.0 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature p in = - 20 dbm, 10 mhz tone spacing - 40 c +25 c +85 c v d = 10v, i dq = 100ma 23 25 27 29 31 33 35 6.0 7.0 8.0 9.0 10.0 11.0 12.0 otoi (dbm) frequency (ghz) otoi vs. frequency vs. v d p in = - 20 dbm, 10 mhz tone spacing 6 v 8v 10v 12v temp. = +25 c 14v i dq = 100ma
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 7 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance conditions unless otherwise specified: v d = 10v, i dq = 10 0 ma, v g = - 2.3v typical 20 23 26 29 32 35 38 6.0 7.0 8.0 9.0 10.0 11.0 12.0 otoi (dbm) frequency (ghz) otoi vs. frequency vs. i d v d = 10v, p in = - 20 dbm, 10 mhz tone spacing i dq =60ma i dq =80ma i dq =100ma temp. = +25 c i dq =120ma i dq =140ma -90 -80 -70 -60 -50 -40 -30 6.0 7.0 8.0 9.0 10.0 11.0 12.0 im3 (dbc) frequency (ghz) im3 vs. frequency vs. temperature p in = - 20 dbm, 10 mhz tone spacing - 40 c +25 c +85 c v d = 10v, i dq = 100ma -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 10 v, i dq = 100 ma, 10 mhz tone spacing temp. = +25 c 8 ghz 10 ghz 12 ghz 6 ghz -60 -50 -40 -30 -20 -10 0 -20 -16 -12 -8 -4 0 4 8 12 im3 (dbc) input power per tone (dbm) im3 vs. input power vs. frequency v d = 10 v, i dq = 100 ma, 10 mhz tone spacing temp. = +25 c 8 ghz 10 ghz 12 ghz 6 ghz
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 8 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit bias - up procedure 1. set i d limit to 230 ma, i g limit to 1ma 2. apply - 5v to v g for pinch off 3. apply +10v to v d 4. adjust v g more positive until i dq = 10 0ma (v g ~ - 2.3 v typical) 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to - 5v. ensure i dq ~ 0ma 3. set v d to 0v 4. turn off v d supply 5. turn off v g supply 1 3 2 4 j1 rf in j2 rf out c10 0.01 uf vd = 10 v, idq = 100 ma r8 4 ohm c12 0.01 uf c8 1 uf vg = -2.3 v typical
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 9 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing rf in rf out r8 4 ohm c12 0.01 uf c8 1 uf c10 0.01 uf vd = 10 v, idq = 100 ma vg = -2.3 v typical 1 2 3 4
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 10 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical drawing & bond pad description unit: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size description 1 rf in 0.098 x 0.19 8 input; matched to 50 ohm s 2 v d 0. 098 x 0.09 8 drain voltage , v d . bias network is required ; s ee application circuit on page 8 as an example. 3 rf out 0. 09 8 x 0.19 8 output; matched to 50 ohm s 4 v g 0. 098 x 0.09 8 gate voltage , v g . bias network is required; s ee application circuit on page 8 as an example. 1 2 3 4
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 11 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonic are critical parameters. ? aluminum w ire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
t ga261 2 6 - 12 ghz gan lna preliminary datasheet: rev - 01 - 29 - 1 5 - 12 of 12 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halo gen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : ear99

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